News 2013

Post-Doctoral Position:

Quantum Transport Modeling of Nano-Transistors

Realistic Modeling of contacts

Laboratory, group: IM2NP, Nanodevice Quantum simulation Group
Marseille, France
Duration: 1 year + 1 year
Starting date: March 2014
Scientific project:

The development of quantum simulation tools capable of guiding the semiconductor industry towards the most suitable architecture constitutes one of the essential issues within the forthcoming years. “Access” components (contacts and doped drain/source regions) have been recognized to play an increasing critical role in the device performances when approaching the “ballistic limit”. Nevertheless, the realistic description of extra-channel parasitic effects such as access resistances and capacitances have been neglected up to now in most of quantum transport simulations.

The post-doc will have to evaluate of self-heating effects and hot-carriers transport in contact regions of nanotransistors such as NWs, FinFETs and FDSOI. These regions are usually depicted as ideal ohmic contacts in device simulations. To achieve this goal, we plan to develop an accurate modeling of the carrier injection from metallic contacts and the transport in highly doped regions. The post-doc will start from our recently developed 2D and 3D non-equilibrium Green’s function codes for both p-type and n-type transistors including phonon interactions [1-4].

Required qualifications:
Applicants must hold a recent Ph.D. in physics, materials science or electrical engineering. Expertise in transistor modeling and simulation is highly desired; strong background in programming (Fortran) would be appreciated. The position is fulltime in the framework of the project NOODLES funded by the French National Research Agency.

[1] H. Mera, M. Lannoo, N. Cavassilas, M. Bescond, “Nanoscale device modeling using a conserving analytic continuation technique,” Phys. Rev. B 88, 075147 (2013).
[2] N. Cavassilas, M. Bescond, H. Mera, and M. Lannoo, “One-shot current conserving quantum transport modeling of phonon scattering in n-type double-gate field-effect-transistors,” Appl. Phys. Lett. 102, 013508 (2013).
[3] E. Dib, M. Bescond, N. Cavassilas, F. Michelini, L. Raymond, and M. Lannoo, “Theoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors,” J. Appl. Phys. 114, 083705 (2013).
[4] M. Bescond, C. Li, H. Mera, N. Cavassilas, and M. Lannoo, “Modeling of phonon scattering in n-type nanowire transistors using one-shot analytic continuation technique,” J. Appl. Phys. 114, 153712 (2013).

Contact:
To apply, send an application including a CV with a list of publications, and names, addresses and emails of two confidential Referees (application deadline 31th of January 2014) to:
Dr. Marc Bescond
E-mail:    marc.bescond@im2np.fr