Publications 2018

1)   N. Cavassilas, D. Logoteta, Y. Lee, F. Michelini, M. Lannoo, M. Bescond, M. Luisier, “A Dual-Gated WTe2/MoSe2 van der Waals Tandem Solar Cell,” The Journal of Physical Chemistry C, 122 (50), 28545, 2018. https://pubs.acs.org/doi/abs/10.1021/acs.jpcc.8b09905

 

2)   N. Cavassilas, D. Suchet, A. Delamarre, F. Michelini, M. Bescond, Y. Okada, M. Sugiyama, J.-F. Guillemoles, “Beneficial impact of a thin tunnel barrier in quantum well intermediate-band solar cell,” EPJ Photovoltaics 9 (11), 2018. https://doi.org/10.1051/epjpv/2018009

 

3)   S. Almosni, A. Delamarre, Z. Jehl, D. Suchet, L. Cojocaru, M. Giteau, B. Behaghel, A. Julian, C. Ibrahim, L. Tatry, H. Wang, T. Kubo, S. Uchida, H. Segawa, N. Miyashita, R. Tamaki, Ya. Shoji, K. Yoshida, N. Ahsan, K. Watanabe, T. Inoue, M. Sugiyama, Y. Nakano, T. Hamamura, T. Toupance, C. Olivier, S. Chambon, L. Vignau, C. Geffroy, E. Cloutet, G. Hadziioannou, N. Cavassilas, P. Rale, A. Cattoni, S. Collin, F. Gibelli, M. Paire, L. Lombez, D. Aureau, M. Bouttemy, Ar. Etcheberry, Y. Okada, J.-F. Guillemoles, “Material challenges for solar cells in the twenty-first century: directions in emerging technologies,” Science and Technology of Advanced Materials 19 (1), 2018. https://doi.org/10.1080/14686996.2018.1433439

 

4)   M. Moussavou, M. Lannoo, N. Cavassilas, D. Logoteta, M. Bescond, “Physically based Diagonal Treatment of the Self-Energy of Polar Optical Phonons: Performance Assessment of III-V Double-Gate Transistors,” Physical Review Applied 10 (6), 064023, 2018. https://doi.org/10.1103/PhysRevApplied.10.064023

 

5)   Y. Lee, M. Bescond, D. Logoteta, N. Cavassilas, M. Lannoo, M. Luisier, “Anharmonic phonon-phonon scattering modeling of three-dimensional atomistic transport: An efficient quantum treatment,” Physical Review B 97 (20), 205447, 2018. https://doi.org/10.1103/PhysRevB.97.205447

 

6)   K. Beltako, F. Michelini, N. Cavassilas, L. Raymond, “Dynamical photo-induced electronic properties of molecular junctions,” The Journal of Chemical Physics 148 (10), 104301 ,2018. https://doi.org/10.1063/1.5004778

 

7)   B. Galvani, A. Delamarre, D. Suchet, M. Bescond, F. Michelini, M. Lannoo, M. Sugyiama, J. Even, J.-F. Guillemoles, N. Cavassilas, “Reduction of Voc induced by the electron-phonon scattering in GaAs and CH3NH3PbI3,” 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC), 2018. 10.1109/PVSC.2018.8547650

 

8)   K. Louarn, Y. Claveau, L. Marigo-Lombart, C. Fontaine, A. Arnoult, F. Piquemal, A. Bounouh, N. Cavassilas, G. Almuneau, “Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions,” Journal of Physics D: Applied Physics, 51 (14), 2018. https://iopscience.iop.org/article/10.1088/1361-6463/aab1de

 

9)   A. Delamarre, D. Suchet, N. Cavassilas, Y. Okada, M. Sugiyama, J.-F. Guillemoles, “Non-ideal nanostructured intermediate band solar cells with an electronic ratchet,” Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII (SPIE) 2018. https://doi.org/10.1117/12.2287716

 

10)   D. Suchet, A. Delamarre, N. Cavassilas, Z. Jehl, Y. Okada, M. Sugiyama, J.-F. Guillemoles, “Voltage preservation in Intermediate Band Solar Cells,” Progress in Photovoltaics: Research and Applications 26 (10), 800, 2018. https://onlinelibrary.wiley.com/toc/1099159x/26/10

 

11)   A. Delamarre, D. Suchet, N. Cavassilas, Y. Okada, M. Sugiyama, J.-F. Guillemoles, “An electronic ratchet is required in nanostructured intermediate band solar cells,” IEEE Journal of Photovoltaics, 8 (6), 1553, 2018. 10.1109/JPHOTOV.2018.2866186

 

12)   M. Bescond, D. Logoteta, F. Michelini, N. Cavassilas, T. Yan, A. Yangui, M. Lannoo, K. Hirakawa, “Thermionic cooling devices based on resonant-tunneling AlGaAs/GaAs heterostructure,” Journal of Physics: Condensed Matter, 30 (6), 2018. https://doi.org/10.1088/1361-648X/aaa4cf

 

13)   D. Logoteta, N. Cavassilas, A. Cresti, M. G Pala, M. Bescond, “Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs,” IEEE Transactions on Electron Devices 65 (2), 424, 2018. 10.1109/TED.2017.2785123

 

14) M. Brahma, M. Bescond, D. Logoteta, R. K. Ghosh and S. Mahapatra, “Germanane MOSFET for sub-deca nanometer high performance technology nodes,” IEEE Trans. Electron Devices 65, 1198 (2018). https://doi.org/10.1109/TED.2017.2788463