Publications 2007

1)   K. Rogdakis, M. Bescond, E. Bano and K. Zekentes, “Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes,” Nanotechnology 18, 475715 (2007).

2)   A. Martinez, M. Bescond, J. R. Barker, A. Svizhenkov, A. Anantram, C. Millar, A. Asenov, “Self-consistent full 3D real-space NEGF simulator for studying of non-perturbative effects in nano-MOSFET,” IEEE Trans. Electron Dev. 54, 2213, (2007).

3)   M. Bescond, N. Cavassilas, and M. Lannoo, “Effective-mass approach for n-type semiconductor Nanowire MOSFETs arbitrarily oriented,” Nanotechnology 18, 255201 (2007).

4)   K. Nehari, N. Cavassilas, F. Michelini, M. Bescond, J.L. Autran, and M. Lannoo, “Full-band study of current across silicon nanowire transistors,” Appl. Phys. Lett., 90, 132112 (2007).

5)   M. Bescond, N. Cavassilas, K. Nehari, and M. Lannoo, “Tight-Binding Calculations of Ge-nanowire Bandstructures,” J. Comp. Electron. 6, 341 (2007).