Publications 2007

1)   K. Rogdakis, M. Bescond, E. Bano and K. Zekentes, “Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes,” Nanotechnology 18, 475715 (2007). http://dx.doi.org/10.1088/0957-4484/18/47/475715

2)   A. Martinez, M. Bescond, J. R. Barker, A. Svizhenkov, A. Anantram, C. Millar, A. Asenov, “Self-consistent full 3D real-space NEGF simulator for studying of non-perturbative effects in nano-MOSFET,” IEEE Trans. Electron Dev. 54, 2213, (2007). http://dx.doi.org/10.1109/TED.2007.902867

3)   M. Bescond, N. Cavassilas, and M. Lannoo, “Effective-mass approach for n-type semiconductor Nanowire MOSFETs arbitrarily oriented,” Nanotechnology 18, 255201 (2007). http://dx.doi.org/10.1088/0957-4484/18/25/255201

4)   K. Nehari, N. Cavassilas, F. Michelini, M. Bescond, J.L. Autran, and M. Lannoo, “Full-band study of current across silicon nanowire transistors,” Appl. Phys. Lett., 90, 132112 (2007). http://dx.doi.org/10.1063/1.2716351

5)   M. Bescond, N. Cavassilas, K. Nehari, and M. Lannoo, “Tight-Binding Calculations of Ge-nanowire Bandstructures,” J. Comp. Electron. 6, 341 (2007). http://dx.doi.org/10.1007/s10825-006-0137-z