Publications 2013

1)   N. Cavassilas, M. Bescond, H. Mera, and M. Lannoo, “One-shot current conserving quantum transport modeling of phonon scattering in n-type double-gate field-effect-transistors,” Appl. Phys. Lett. 102, 013508 (2013). http://dx.doi.org/10.1063/1.4775365

2)   E. Dib, M. Bescond, N. Cavassilas, F. Michelini, L. Raymond, and M. Lannoo, “Theoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors,” J. Appl. Phys. 114, 083705 (2013). http://dx.doi.org/10.1063/1.4819241

3)   H. Mera, M. Lannoo, N. Cavassilas and M. Bescond, “Nanoscale device modelling using a conserving analytic continuation technique,” Phys. Rev. B 88, 075147 (2013). http://link.aps.org/doi/10.1103/PhysRevB.88.075147

4)   A. Berbezier, J.L. Autran, F. Michelini, “Photovoltaic response in a resonant tunneling wire-dot-wire junction,” Appl. Phys. Lett. 103, 041113 (2013). http://dx.doi.org/10.1063/1.4816593

5)   A. Berbezier, F. Michelini, “Modeling of quantum dot junction for third generation solar cell,” Thin Solid Films 543, 16-18 (2013). http://dx.doi.org/10.1016/j.tsf.2013.03.080

6)   A. Berbezier and F. Michelini, “Green functions for photovoltaic response of quantum wire-dot-wire junctions,” Optical and Quantum Electronics 45, 693 (2013). http://dx.doi.org/10.1007/s11082-013-9686-0

7)   M. Bescond, C. Li, H. Mera, N. Cavassilas, M. Lannoo, “Modeling of phonon scattering in n-type nanowire transistors using one-shot analytic continuation technique,” J. Appl. Phys. 114, 153712 (2013). http://dx.doi.org/10.1063/1.4825226