Publications 2016

1) E. Dib, H. Carrillo-Nuñez, N. Cavassilas and M. Bescond, “Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions,” J. Appl. Phys. 119, 044509 (2016).

2) Y. Lee, M. Lannoo, N. Cavassilas, M. Luisier, and M. Bescond, “Efficient quantum modeling of inelastic interactions in nanodevices,” Phys. Rev. B 93, 205411 (2016).

3) M. Bescond, H. H. Carrillo-Nuñez, S. Berrada, N. Cavassilas and M. Lannoo, “Size and temperature dependence of the electron–phonon scattering by donors in nanowire transistors,” Solid State Electron. 122, 1 (2016).

4) H. Zhang, X. Dai, N. Guan, A. Messanvi, V. Neplokh, V. Piazza, M. Vallo, C. Bougerol, F. H. Julien, A. Babichev, N. Cavassilas, M. Bescond, F. Michelini, M. Foldyna, E. Gautier, C. Durand, J. Eymery, M. Tchernycheva, “Flexible Photodiodes Based on Nitride Core/Shell p–n Junction Nanowires,” ACS Applied Materials & Interfaces 8, 26198 (2016).

5) N. Cavassilas, F. Michelini, M. Bescond, “On the local approximation of the electron–photon interaction self-energy,” Journal of Computational Electronics 15, 1233 (2016).

6) M. Bescond and P. Dollfus, “Introduction to the special on inelastic scattering,” Journal of Computational Electronics 15, 1119 (2016).

7) K Beltako, N Cavassilas, F Michelini, “State hybridization shapes the photocurrent in triple quantum dot nanojunctions,” Appl. Phys. Lett. 109, 073501 (2016).

8) A. Portavoce, J. Perrin Toinin, K. Hoummada, L. Raymond, G. Tréglia, “Stress influence on substitutional impurity segregation on dislocation loops in IV–IV semiconductors,” Computational Materials Science 114, 23 (2016).