Quantamonde

Name of the project: QUANTAMONDE

  • Description : QUANTum and Atomistic MOdeling NanoDEvices
  • Context : Programme National en Nanosciences et Nanotechnologies (PNANO)
  • Funding : Agence Nationale de la Recherche
  • Duration of the project : 36 months (2008 – 2011)

Presentation:

This proposal focuses on the development of a new generation of quantum transport simulation tools tackling with atomic scale issues which become of paramount importance for understanding low dimensional semiconductor devices.
On the basis of a common Green’s function formalism, the complementary expertises of partners, ranging from state-of-the-art ab initio approach, to sophisticated tight-binding and effective mass models have been combined to develop multiscale 3D device simulation codes. It allowed an in-depth analysis of quantum transport properties and field effect transistor characteristics in realistic models of both top-down ultimate MOSFETs and bottom-up CVD-grown semiconductor nanowires.
Using an upscaling strategy from ab initio to effective mass schemes, the impact of intrinsic scattering mechanisms on current characteristics have been investigated, based on a rigorous self-consistent treatment of electrostatics. Simultaneously, the quantum coherent effects in the low temperature regimes have been explored, with a focus on the spin coherence lengths in the perspective of semiconductor nanowire-based spintronics.
QUANTAMONDE project offered a natural means for fusing the expertise of different research groups and leading to breakthroughs in the understanding of nano-transistors.

Partners:

Partner 1 – Coordinator et scientific responsible of the project

Marc Bescond, IM2NP Dispositif Ultime sur Silicium
IM2NP UMR CNRS 6242 • Bât. IRPHE • 49, rue Joliot-Curie • BP 146 • Technopôle de Château-Gombert – 13384 Marseille Cedex 13 • France
Tel : +33 (0)4 96 13 97 31 • Fax : +33 (0)4 96 13 97 09
Mail : marc.bescondr@IM2NP.fr
im2np
www.IM2NP.fr

Partner 2

Yann-Michel Niquet
INAC CEA Grenoble • 17 rue des Martyrs • Grenoble Cedex 9 • France
Tel : +33 (0)4 38 78 43 22 • Fax : 04 38 78 51 97
Mail : yann-michel.niquet@cea.fr
INAC
inac.cea.fr

Partner 3

Christophe Delerue, IEMN, Groupe de Physique Théorique
IEMN UMR CNRS 8520 • Département ISEN • 41 Boulevard Vauban • 59046 Lille Cedex • France
Tel : +33 (0)3 20 30 40 53 • Fax : +33 (0)3 20 30 40 51
Mail : Christophe.delerue@isen.fr
iemn
www.iemn.univ-lille1.fr

Partner 4

Marco Pala, IMEP-LAHC
IMEP-LAHC UMR CNRS 5130 • MINATEC-INPG • 3 Parvis Louis Néel • BP 257 • 38016 Grenoble • France
Tel : +33 (0)4 56 52 95 49 • Fax : +33 (0)4 56 52 95 01
Mail : pala@minatec.inpg.fr
imep-lahc
www.imep.enserg.fr

Partner 5

Xavier Blase, Institut Néel
Institut Néel UMR 2940 • CNRS 25 rue des Martyrs • BP 166 • 38042 Grenoble • France
Tel : +33 (0)4 76 88 74 68 •
Mail : xavier.blase@grenoble.cnrs.fr
neel
neel.cnrs.fr

Partner 6

Clément Tavernier, STMicroelectronics
STMicroelectronics SA • 850 rue Jean Monnet • 38926 Crolles Cedex • France
Tel : +33 (0)4 76 92 23 42 • Fax : +33 (0)4 76 92 37 84
Mail : clement.tavernier@st.com
logo_ST
www.st.com

Main publications:

- Holes transport:

N. Cavassilas et al., IEEE-IEDM, Tech. Digest p.67 (2009). http://dx.doi.org/10.1109/IEDM.2009.5424418

N. Cavassilas et al., Appl. Phys. Lett. 96, 102102 (2010). http://dx.doi.org/10.1063/1.3352558

- Impurity effects:

M. Bescond et al., J. Appl. Phys. 107, 093703 (2010). http://dx.doi.org/10.1063/1.3399999

M. P. Persson et al., Phys. Rev. B 82, 115318 (2010). http://dx.doi.org/10.1103/PhysRevB.82.115318

X. Blase et al., Phys. Rev. Lett. 100, 046802 (2008). http://dx.doi.org/10.1103/PhysRevLett.100.046802

- Influence of roughness at the Si/SiO2 interface and remote Coulomb scattering:

S. Poli et al., IEEE-Transactions on Electron Devices 55, 2968-2976 (2008).

http://dx.doi.org/10.1109/TED.2008.2005164

S. Poli et al., IEEE-Transactions on Electron Devices 56, 1191-1198 (2009).

http://dx.doi.org/10.1109/TED.2009.2019380

C. Buran et al., IEEE-Transactions on Electron Devices 56, 2186-2192 (2009).

http://dx.doi.org/10.1109/TED.2009.2028382

M.P. Persson et al. Nanolett. 8, 4146 (2008). http://dx.doi.org/10.1021/nl801128f

- Influences of phonon interactions:

S. Poli, M.G. Pala, IEEE Electron Device Letters 30, 1212-1214 (2009).

http://dx.doi.org/10.1109/LED.2009.2031418

W. Zhang et al., Phys. Rev. B 82, 115319 (2010).  http://dx.doi.org/10.1103/PhysRevB.82.115319

E. Bourgeois et al., Phys. Rev. B 81, 193410 (2010). http://dx.doi.org/10.1103/PhysRevB.81.193410

- Interface induced correlation effects:

C. Li et al., Appl.Phys. Lett. 97, 252109 (2010). http://link.aip.org/link/doi/10.1063/1.3526739

C. Li et al., Phys. Rev. B, 80, 195318 (2009). http://dx.doi.org/10.1103/PhysRevB.80.195318

- Bande structure calculations:

Y-M. Niquet, D. Rideau et al., Phys. Rev. B 79, 245201 (2009).

http://link.aip.org/link/doi/10.1103/PhysRevB.79.245201