Research Fellow at CNRS (CR1-HDR) – Now at LIMMS CNRS-IIS University of Tokyo (Hirakawa Lab) Education: 2001: Master’s Degree in “Materials science and Engineering” from INSA-National Institute of Applied Sciences (Lyon, France). 2004: PhD degree from the « Université de Provence » (now “Aix-Marseille Université”). Thesis title: Modelling and simulation of quantum transport in nano-scaled MOSFETs Thesis advisor:...Read More
Born on May 3, 1972 in Grenoble (France). Education: 1996: Master Degree in Physics from the « Université de Montpellier » (France). 2000: PhD degree from the « Université Paris XI » (Orsay, France). Thesis title: Impact-Ionization in III-V semiconductors: application to filed-effect transistor. Thesis advisor: F. Aniel. Professional: Since February 2003 Nicolas...Read More
Born on October the 17th, 1971 Béziers (France). Education: 1996: “Agrégation de sciences physiques, option physique” 1997: Master Degree in Physics from the “Université Paul Sabatier de Toulouse” (France). 2000: Ph-D, theoretical/numerical physics, National Institute of Applied Sciences of Toulouse, es Physique du Solide, “k.p method for semiconductor structures: application to quantum wire superlattices and...Read More
Born on February 28, 1970 in Marseilles (France). Education: 1992: Master Degree in Physics, Université de Provence (Marseilles, France). 1995: PhD degree in Physics, Université de Provence (Marseilles, France). Thesis title: “Algebraic study of quasiperiodic media.” Thesis advisor: B. Iochum. 2011: “Habilitation à diriger des recherches” (Professorial Thesis in Physics), Université de Provence (Marseilles, France)....Read More
Born on July 05, 1942, Lille (France). Education : 1963 : Engineering degree at ISEN (Institut Supérieur d’Electronique du Nord, Lille) 1966 : Ph.D thesis at Orsay (France), supervisors: J. Friedel and G. Leman. 1969 : Doctorate thesis, Lille (France), supervisors: J. Friedel and G. Leman. Professional: - 1968 : Admission to the CNRS as...Read More
Enhanced thermopower in the transient regime
Fig.1: Increase of the Seebeck coefficient in the transient regime of a metal/dot/metal junction. Collaboration with A. Crépieux, CPT Marseille We derived formal expressions of time-dependent energy and heat currents through a nanoscopic device using the Keldysh nonequilibrium Green function...
Dynamical spin Hall conductivity in a magnetic disordered system
FIG. 1 : Schematic geometry of the spin Hall effect; a longitudinal current jx driven by an external electric field induces a transversal spin current that results in a polarization of the carrier spins following the sign of their momentum (spheres...
Quantum PV effect in hetero-nanowire junctions
Following that idea of combining one-dimensional and zero-dimensional nanostructures, like in photonics devices, we investigated the photovoltaic response of a mesoscopic junction in which the light is absorbed in a quantum dot laterally connected to two quantum wires on each...