Publications 2008

1)   A. Martinez, J. R. Barker, A. Svizhenko, A. Anantram, M. Bescond, and A. Asenov, “Ballistic quantum simulators for studying variability in nanotransistors,” J. Comput. Theor. Nanosci., 5, 2289-2310 (2008). Review paper,

2)   K. Nehari, M. Lannoo, F. Michelini, N. Cavassilas, M. Bescond, and J. L. Autran, “Improved effective mass theory for silicon nanostructures,” Appl. Phys. Lett., 93, 092103 (2008).

3)   A. Martinez, J.R. Barker, M. Bescond, A.R. Brown and A. Asenov, “Performance variability in wrap-round gate silicon nano-transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain,” J. Phys.-Conference Series, 109, 012026 (2008).

4)   K. Rogdakis, S.-Y. Lee, M. Bescond, S.-K. Lee, E. Bano and K. Zekentes, “3C-Silicon Carbide nanowire FET: An experimental and theoretical Approach,” IEEE Trans. Electron Dev. 55, 1970 (2008).

5)   C. Buran, M. G. Pala, M. Bescond, M. Mouis, “Full-three dimensional quantum simulation approach for surface-roughness-limited mobility in SNWT,” J. Comp. Electron. 7, 328 (2008).

6)   A. Martinez, M. Bescond, A.R. Brouwn, J.R. Barker, A. Asenov, “A full 3D non-equilibrium green functions study of a stray charge in a nanowire MOS transistor,” J. Comp. Electron. 7, 359 (2008).