Publications 2009

1)   C. Li, M. Bescond and M. Lannoo, “A GW investigation of interface induced correlation effects on transport properties in realistic nanoscale structures,” Phys. Rev. B, 80, 195318 (2009).

2)   M. Bescond, C. Li, M. Lannoo, “Nanowire transistor modeling: influence of ionized impurity and correlation effects,” J. Comp. Electron. 8, 382 (2009), Invited paper.

3)   N. Pons, N. Cavassilas, F. Michelini, L. Raymond and M. Bescond, “New shaped nanowire MOSFETs with enhanced current characteristics based on three-dimensional modeling,” J. Appl. Phys., 106, 053711 (2009).

4)   C. Buran, M. G. Pala, M. Bescond, M. Dubois, and M. Mouis, “Three dimensional real space simulation of surface roughness in silicon nanowire FETs,” IEEE Trans. Electron Dev., 56, 2186 (2009).