Publications 2010

1)   C. Li, M. Bescond and M. Lannoo, “Influence of the interface-induced electron self-energy on the subthreshold characteristics of silicon gate-all-around nanowire transistors,” Appl. Phys. Lett. 97, 252109 (2010).

2)   M. Bescond, M. Lannoo, L. Raymond and F. Michelini, “Single donor induced negative differential resistance in silicon n-type nanowire Metal-Oxide-Semiconductor transistors,” J. Appl. Phys. 107, 093703 (2010).

3)   N. Cavassilas, N. Pons, F. Michelini and M. Bescond, “Multiband quantum transport simulations of ultimate p-type double-gate transistors: Influence of the channel orientation,” Appl. Phys. Lett. 96, 102102 (2010).

4)   A. Titov, F. Michelini, L. Raymond, et al., “Gap narrowing in charged and doped silicon nanoclusters,” Phys. Rev. B 82, 235419 (2010).

5)   R. O. Kuzian, V. V. Laguta, A.-M. Daré, I. V. Kondakova, M. Marysko, L. Raymond, et al. “Mechanisms of magnetoelectricity in manganese-doped incipient ferroelectrics,” Europhys. Lett. 92 17007 (2010).