Publications

1) T. Vezin, X. Zhu, C. Salhani, M. Bescond, K. Hirakawa, D. Suchet,”Distinguishing carriers’ and lattice temperatures through photoluminescence analysis” J.Condens.Matter Phys. 37, (43), 435702 (2025). https://doi.org/10.1088/1361-648X/ae1178 (https://doi.org/10.1088/1361-648X/ae1178) 2) A.-M. Daré, C. Demarez, J. Missirian, F. Michelini, "Revisiting the working principle of the Fenna-Matthews-Olson photosynthetic complex," Phys. Rev. Appl. 23, 044061 (2025). https://doi.org/10.1103/PhysRevApplied.23.044061 (https://doi.org/10.1103/PhysRevApplied.23.044061)

1) P. Dalla Valle, M. Bescond, F. Michelini, N. Cavassilas,”Solar Refrigeration Based on Impact Ionization in a Transition Metal Dichalcogenides Superlattice” J. Phys. Chem. C 128, 12, 4905–4913 (2024). https://doi.org/10.1021/acs.jpcc.3c08273(https://doi.org/10.1021/acs.jpcc.3c08273) 2) G. Etesse, C. Salhani, X. Zhu, N. Cavassilas, K. Hirakawa, and M. Bescond, "Selective energy filtering in a multiple-quantum-well nanodevice: The quantum cascade cooler," Phys. Rev. Appl. 21, 054010 (2024). https://doi.org/10.1103/PhysRevApplied.21.054010(https://doi.org/10.1103/PhysRevApplied.21.054010) 3) X. Zhu, C. Salhani, G. Etesse, N. Nagai, M. Bescond, F. Carosella, R. Ferreira, G. Bastard, and K. Hirakawa, “Electron Cooling Behavior in Cascading Semiconductor Double-Quantum-Well Structures,” Phys. Rev. Appl. 22, 034012 (2024). https://doi.org/10.1103/PhysRevApplied.21.054010(https://doi.org/10.1103/PhysRevApplied.21.054010) 4) J. G. Fernandez, G. Etesse, N. Seoane, E. Comesaña, K. Hirakawa, A. Garcia-Loureiro, M. Bescond, “A novel machine learning workflow to optimize cooling devices grounded in solid-state physics,” Sci Rep 14, 28545 (2024). https://doi.org/10.1038/s41598-024-80212-9(https://doi.org/10.1038/s41598-024-80212-9) 5) V.‐T. Tran, R. D’Agosta, M. Bescond, S. Volz, “Ab Initio Phonon Transport Based on Nonequilibrium Green's Function Formalism: A Practical Approach,” Phys. Status Solidi B Basic Res. 2400353 (2024). https://doi.org/10.1002/pssb.202400353 (https://doi.org/10.1002/pssb.202400353)

1) A. Philippe, F. Carosella, X. Zhu, C. Salhani K. Hirakawa, M. Bescond, R. Ferreira, and G. Bastard, “Rate equations description of the asymmetric double barrier electronic cooler,” J. Appl. Phys., 134, 124305 (2023). https://doi.org/10.1063/5.0155720(https://doi.org/10.1063/5.0155720) 2) P. Dalla Valle, M. Bescond, F. Michelini, and N. Cavassilas, "Laser cooling in semiconductor heterojunctions by extraction of photogenerated carriers," Phys. Rev. Appl. 20, 014066 (2023). https://doi.org/10.1103/PhysRevApplied.20.014066 (https://doi.org/10.1103/PhysRevApplied.20.014066) 3) C. Belabbas, A. Crépieux , N. Cavassilas, F. Michelini, X. Zhu, C. Salhani, G. Etesse, K. Hirakawa and M. Bescond, "Temperature-Induced Revolving Effect of Electronic Flow in Asymmetric Double-Barrier Semiconductor Heterostructures," Phys. Rev. Appl. 20, 014056 (2023). https://doi.org/10.1103/PhysRevApplied.20.014056(https://doi.org/10.1103/PhysRevApplied.20.014056) 4) Z. Zhang, Y. Guo, M. Bescond, M. Nomura, S. Volz, J. Chen, “Assessing phonon coherence using spectroscopy,” Phys. Rev. B 107, 155426 (2023). https://doi.org/10.1103/PhysRevB.107.155426 (https://doi.org/10.1103/PhysRevB.107.155426)

1) Z. Zhang, Y. Guo, M. Bescond, J. Chen, M. Nomura and S. Volz, “Heat Conduction Theory Including Phonon Coherence,” Phys. Rev. Lett. 128, 015901 (2022). https://doi.org/10.1103/PhysRevLett.128.015901(https://doi.org/10.1103/PhysRevLett.128.015901) 2) M. Bescond, G. Dangoisse, X. Zhu, C. Salhani and K. Hirakawa, "Comprehensive analysis of electron evaporative cooling in double-barrier semiconductor heterostructures,” Phys. Rev. Appl. 17, 014001(2022). https://doi.org/10.1103/PhysRevApplied.17.014001(https://doi.org/10.1103/PhysRevApplied.17.014001) 3) N. Cavassilas, I. Makhfudz, A.-M. Daré, M. Lannoo, G. Dangoisse, M. Bescond, F. Michelini, “Theoretical Demonstration of Hot-Carrier Operation in an Ultrathin Solar Cell,” Phys. Rev. Appl. 17 (6), 064001 (2022). https://doi.org/10.1103/PhysRevApplied.17.064001(https://doi.org/10.1103/PhysRevApplied.17.064001) 4) Z. Zhang, Y. Guo, M. Bescond, J. Chen, M. Nomura and S. Volz, "How coherence is governing diffuson heat transfer in amorphous solids," Npj Comput. Mater. 8, 96 (2022). https://doi.org/10.1038/s41524-022-00776-w (https://doi.org/10.1038/s41524-022-00776-w) 5) I. Makhfudz, N. Cavassilas, M. Giteau, H. Esmaielpour, D. Suchet, A.-M. Daré, F. Michelini, "Enhancement of hot carrier effect and signatures of confinement in terms of thermalization power in quantum well solar cell," J. Phys. D: Appl. Phys. 55 (47), 475102 (2022). https://doi.org/10.1088/1361-6463/ac94dd (https://doi.org/10.1088/1361-6463/ac94dd)

1) X. Zhu, M. Bescond, T. Onoue, G. Bastard, F. Carosella, R. Ferreira, N. Nagai, and K. Hirakawa, “Electron transport in double-barrier semiconductor heterostructures for thermionic cooling,” Phys. Rev. Appl., 16, 064017 (2021) https://doi.org/10.1103/PhysRevApplied.16.064017(https://doi.org/10.1103/PhysRevApplied.16.064017) 2) Y. Guo, M. Bescond, Z. Zhang, S. Xiong, K. Hirakawa, M. Nomura, S. Volz, “Thermal conductivity minimum of graded superlattices due to phonon localization,” APL Materials 9 (9), 091104 (2021). https://doi.org/10.1063/5.0054921(https://doi.org/10.1063/5.0054921) 3) Y. Guo, Z. Zhang, M. Bescond, S. Xiong, M. Wang, M. Nomura, S. Volz, “Size effect on phonon hydrodynamics in graphite microstructures and nanostructures,” Phys. Rev. B 104 (7), 075450 (2021). https://doi.org/10.1103/PhysRevB.104.075450(https://doi.org/10.1103/PhysRevB.104.075450) 4) Y. Guo, Z. Zhang, M. Bescond, S. Xiong, M. Nomura, S. Volz, “Anharmonic phonon-phonon scattering at the interface between two solids by nonequilibrium Green's function formalism,” Phys. Rev. B 103 (17), 174306 (2021). https://doi.org/10.1103/PhysRevB.103.174306(https://doi.org/10.1103/PhysRevB.103.174306) 5) Z. Zhang, Y. Guo, M. Bescond, J. Chen, M. Nomura, S. Volz, “Coherent thermal transport in nano-phononic crystals: An overview,” APL Materials 9 (8), 081102 (2021). https://doi.org/10.1063/5.0059024(https://doi.org/10.1063/5.0059024) 6) Z. Zhang, Y. Guo, M. Bescond, J. Chen, M. Nomura, S. Volz, “Thermal self-synchronization of nano-objects,” J. Appl. Phys. 130 (8), 084301 (2021). https://doi.org/10.1063/5.0058252(https://doi.org/10.1063/5.0058252) 7) Z. Zhang, Y. Guo, M. Bescond, J. Chen, M. Nomura, S. Volz, “Generalized decay law for particle like and wavelike thermal phonons,” Phys. Rev. B 103 (18), 184307 (2021). https://doi.org/10.1103/PhysRevB.103.184307(https://doi.org/10.1103/PhysRevB.103.184307) 8) K. Li, Y. Cheng, H. Wang, Y. Guo, Z. Zhang, M. Bescond, M. Nomura, S. Volz, X. Zhang, S. Xiong, “Phonon resonant effect in silicon membranes with different crystallographic orientations,” Int. J. Heat Mass Transf. (in press) 2021. https://doi.org/10.1016/j.ijheatmasstransfer.2021.122144(https://doi.org/10.1016/j.ijheatmasstransfer.2021.122144) 9) H. Wang, Y. Cheng, Z. Fan, Y. Guo, Z. Zhang, M. Bescond, M. Nomura, T. Ala-Nissila, S. Volz, S. Xiong, “Anomalous thermal conductivity enhancement in low dimensional resonant nanostructures due to imperfections,” Nanoscale, 13, 10010 (2021). https://doi.org/10.1039/D1NR01679B(https://doi.org/10.1039/D1NR01679B)

1) M. Bescond, K. Hirakawa, “High performance thermionic cooling devices based on tilted-barrier semiconductor heterostructures,” Phys. Rev. Appl., 14, 064022 (2020). [Editor’s Suggestion] https://doi.org/10.1103/PhysRevApplied.14.064022(https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.14.064022) 2) Y. Guo, M. Bescond, Z. Zhang, M. Luisier, M. Nomura, and S. Volz, “Quantum mechanical modeling of anharmonic phonon-phonon scattering in nanostructures,” Phys. Rev. B, 102, 195412 (2020). https://doi.org/10.1103/PhysRevB.102.195412(https://journals.aps.org/prb/abstract/10.1103/PhysRevB.102.195412) 3) N. Cavassilas, D. Suchet, A. Delamarre, J.-F. Guillemoles, F. Michelini, M. Bescond, M. Lannoo, “Optimized operation of quantum-dot intermediate-band solar cells deduced from electronic-transport modeling,” Phys. Rev. Applied 13 (4), 044035, 2020. https://doi.org/10.1103/PhysRevApplied.13.044035(https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.13.044035) 4) Y. Lee, D. Logoteta, N. Cavassilas, M. Lannoo, M. Luisier, M. Bescond, “Quantum Treatment of Inelastic Interactions for the Modeling of Nanowire Field-Effect Transistors,” Materials 13 (1), 60, 2020. https://www.mdpi.com/1996-1944/13/1/60(https://www.mdpi.com/1996-1944/13/1/60)

1) K. Beltako, N. Cavassilas, M. Lannoo, F.V. Michelini, “Insights into the Charge Separation Dynamics in Photoexcited Molecular Junctions,” The Journal of Physical Chemistry C, 123 (51), 30885, 2019. https://pubs.acs.org/doi/abs/10.1021/acs.jpcc.9b10911(https://pubs.acs.org/doi/abs/10.1021/acs.jpcc.9b10911) 2) B. Galvani, D. Suchet, A. Delamarre, M. Bescond, F. Michelini, M. Lannoo, J.-F. Guillemoles, N. Cavassilas, “Impact of electron-phonon scattering on optical properties of CH3NH3PbI3 hybrid perovskite material,” ACS Omega, 4 (25), 21487, 2019. https://pubs.acs.org/doi/abs/10.1021/acsomega.9b03178(https://pubs.acs.org/doi/abs/10.1021/acsomega.9b03178) 3) K. Louarn, Y. Claveau, C. Fontaine, A. Arnoult, L. Marigo-Lombart, I. Massiot, F. Piquemal, A. Bounouh, N. Cavassilas, G. Almuneau, “Thickness limitation of band-to-band tunneling process in GaAsSb/InGaAs type-II tunnel junctions designed for multijunction solar cells,” ACS Applied Energy Materials, 2 (2), 1149, 2019. https://pubs.acs.org/doi/10.1021/acsaem.8b01700(https://pubs.acs.org/doi/10.1021/acsaem.8b01700) 4) A. Yangui, M. Bescond, T. Yan,N. Nagai, and K. Hirakawa, “Evaporative electron cooling in asymmetric double barrier semiconductor heterostructures,” Nature Commun. 10, 4504 (2019). https://doi.org/10.1038/s41467-019-12488-9(https://www.nature.com/articles/s41467-019-12488-9) 5) M. Brahma, A. Kabiraj, M. Bescond, S. Mahapatra, “Phonon limited anisotropic quantum transport in phosphorene field effect transistors,” J. Appl. Phys. 126, 114502 (2019). https://doi.org/10.1063/1.5109057(https://doi.org/10.1063/1.5109057)

1) N. Cavassilas, D. Logoteta, Y. Lee, F. Michelini, M. Lannoo, M. Bescond, M. Luisier, “A Dual-Gated WTe2/MoSe2 van der Waals Tandem Solar Cell,” The Journal of Physical Chemistry C, 122 (50), 28545, 2018. https://pubs.acs.org/doi/abs/10.1021/acs.jpcc.8b09905(https://pubs.acs.org/doi/abs/10.1021/acs.jpcc.8b09905) 2) N. Cavassilas, D. Suchet, A. Delamarre, F. Michelini, M. Bescond, Y. Okada, M. Sugiyama, J.-F. Guillemoles, “Beneficial impact of a thin tunnel barrier in quantum well intermediate-band solar cell,” EPJ Photovoltaics 9 (11), 2018. https://doi.org/10.1051/epjpv/2018009(https://www.epj-pv.org/articles/epjpv/full_html/2018/01/pv180008/pv180008.html) 3) S. Almosni, A. Delamarre, Z. Jehl, D. Suchet, L. Cojocaru, M. Giteau, B. Behaghel, A. Julian, C. Ibrahim, L. Tatry, H. Wang, T. Kubo, S. Uchida, H. Segawa, N. Miyashita, R. Tamaki, Ya. Shoji, K. Yoshida, N. Ahsan, K. Watanabe, T. Inoue, M. Sugiyama, Y. Nakano, T. Hamamura, T. Toupance, C. Olivier, S. Chambon, L. Vignau, C. Geffroy, E. Cloutet, G. Hadziioannou, N. Cavassilas, P. Rale, A. Cattoni, S. Collin, F. Gibelli, M. Paire, L. Lombez, D. Aureau, M. Bouttemy, Ar. Etcheberry, Y. Okada, J.-F. Guillemoles, “Material challenges for solar cells in the twenty-first century: directions in emerging technologies,” Science and Technology of Advanced Materials 19 (1), 2018. https://doi.org/10.1080/14686996.2018.1433439(https://www.tandfonline.com/doi/full/10.1080/14686996.2018.1433439) 4) M. Moussavou, M. Lannoo, N. Cavassilas, D. Logoteta, M. Bescond, “Physically based Diagonal Treatment of the Self-Energy of Polar Optical Phonons: Performance Assessment of III-V Double-Gate Transistors,” Physical Review Applied 10 (6), 064023, 2018. https://doi.org/10.1103/PhysRevApplied.10.064023(https://doi.org/10.1103/PhysRevApplied.10.064023) 5) Y. Lee, M. Bescond, D. Logoteta, N. Cavassilas, M. Lannoo, M. Luisier, “Anharmonic phonon-phonon scattering modeling of three-dimensional atomistic transport: An efficient quantum treatment,” Physical Review B 97 (20), 205447, 2018. https://doi.org/10.1103/PhysRevB.97.205447(https://journals.aps.org/prb/abstract/10.1103/PhysRevB.97.205447) 6) K. Beltako, F. Michelini, N. Cavassilas, L. Raymond, “Dynamical photo-induced electronic properties of molecular junctions,” The Journal of Chemical Physics 148 (10), 104301 ,2018. https://doi.org/10.1063/1.5004778(https://aip.scitation.org/doi/10.1063/1.5004778) 7) B. Galvani, A. Delamarre, D. Suchet, M. Bescond, F. Michelini, M. Lannoo, M. Sugyiama, J. Even, J.-F. Guillemoles, N. Cavassilas, “Reduction of Voc induced by the electron-phonon scattering in GaAs and CH3NH3PbI3,” 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC), 2018. 10.1109/PVSC.2018.8547650(https://ieeexplore.ieee.org/document/8547650) 8) K. Louarn, Y. Claveau, L. Marigo-Lombart, C. Fontaine, A. Arnoult, F. Piquemal, A. Bounouh, N. Cavassilas, G. Almuneau, “Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions,” Journal of Physics D: Applied Physics, 51 (14), 2018. https://iopscience.iop.org/article/10.1088/1361-6463/aab1de(https://iopscience.iop.org/article/10.1088/1361-6463/aab1de) 9) A. Delamarre, D. Suchet, N. Cavassilas, Y. Okada, M. Sugiyama, J.-F. Guillemoles, “Non-ideal nanostructured intermediate band solar cells with an electronic ratchet,” Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII (SPIE) 2018. https://doi.org/10.1117/12.2287716(https://doi.org/10.1117/12.2287716) 10) D. Suchet, A. Delamarre, N. Cavassilas, Z. Jehl, Y. Okada, M. Sugiyama, J.-F. Guillemoles, “Voltage preservation in Intermediate Band Solar Cells,” Progress in Photovoltaics: Research and Applications 26 (10), 800, 2018. https://onlinelibrary.wiley.com/toc/1099159x/26/10(https://onlinelibrary.wiley.com/toc/1099159x/26/10) 11) A. Delamarre, D. Suchet, N. Cavassilas, Y. Okada, M. Sugiyama, J.-F. Guillemoles, “An electronic ratchet is required in nanostructured intermediate band solar cells,” IEEE Journal of Photovoltaics, 8 (6), 1553, 2018. 10.1109/JPHOTOV.2018.2866186(https://ieeexplore.ieee.org/document/8454772) 12) M. Bescond, D. Logoteta, F. Michelini, N. Cavassilas, T. Yan, A. Yangui, M. Lannoo, K. Hirakawa, “Thermionic cooling devices based on resonant-tunneling AlGaAs/GaAs heterostructure,” Journal of Physics: Condensed Matter, 30 (6), 2018. https://doi.org/10.1088/1361-648X/aaa4cf(https://doi.org/10.1088/1361-648X/aaa4cf) 13) D. Logoteta, N. Cavassilas, A. Cresti, M. G Pala, M. Bescond, “Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs,” IEEE Transactions on Electron Devices 65 (2), 424, 2018. 10.1109/TED.2017.2785123(https://ieeexplore.ieee.org/document/8263503) 14) M. Brahma, M. Bescond, D. Logoteta, R. K. Ghosh and S. Mahapatra, “Germanane MOSFET for sub-deca nanometer high performance technology nodes,” IEEE Trans. Electron Devices 65, 1198 (2018). https://doi.org/10.1109/TED.2017.2788463(https://ieeexplore.ieee.org/document/8267130)

1) D. Duche, U. Planchoke, F.-X. Dang, J. Le Rouzo, M. Bescond, J.-J. Simon, T. S. Balaban, and L. Escoubas, “Model of self assembled monolayer based molecular diodes made of ferrocenyl-alkanethiols,” J. Appl. Phys. 121, 115503 (2017). http://dx.doi.org/10.1063/1.4978764(https://aip.scitation.org/doi/10.1063/1.4978764) 2) F. Michelini, A. Crépieux and K. Beltako “Entropy production in photovoltaic-thermoelectric nanodevices from the non-equilibrium Green’s function formalism,” J. Phys. Condens. Matter. 29, 175301 (2017). https://doi.org/10.1088/1361-648X/aa62e4(https://iopscience.iop.org/article/10.1088/1361-648X/aa62e4) 3) N. Cavassilas, Y. Claveau, M Bescond, F. Michelini, “Quantum electronic transport in polarization-engineered GaN/InGaN/GaN tunnel junctions,” Appl. Phys. Lett. 110, 161106 (2017). https://doi.org/10.1063/1.4981135(https://doi.org/10.1063/1.4981135) 4) Y. Lee, M. Bescond, N. Cavassilas, D. Logoteta, L. Raymond, M. Lannoo, M. Luisier, “Quantum treatment of phonon scattering for modeling of three-dimensional atomistic transport,” Phys. Rev. B (R) 95, 201412 (2017). https://doi.org/10.1103/PhysRevB.95.201412(https://journals.aps.org/prb/abstract/10.1103/PhysRevB.95.201412) 5) H. Zhang, N. Guan, V. Piazza, A. Kapoor, C. Bougerol, F. H. Julien, A. V. Babichev, N. Cavassilas, M. Bescond, F. Michelini, M. Foldyna, E. Gautier, C. Durand, J. Eymery, M. Tchernycheva, “Comprehensive analyses of core–shell InGaN/GaN single nanowire photodiodes,” Journal of Physics D: Applied Physics, 50, 484001 (2017). https://doi.org/10.1088/1361-6463/aa935d(https://iopscience.iop.org/article/10.1088/1361-6463/aa935d)

1) E. Dib, H. Carrillo-Nuñez, N. Cavassilas and M. Bescond, “Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions,” J. Appl. Phys. 119, 044509 (2016). http://dx.doi.org/10.1063/1.4940959(https://aip.scitation.org/doi/10.1063/1.4940959) 2) Y. Lee, M. Lannoo, N. Cavassilas, M. Luisier, and M. Bescond, “Efficient quantum modeling of inelastic interactions in nanodevices,” Phys. Rev. B 93, 205411 (2016). http://dx.doi.org/10.1103/PhysRevB.93.205411(https://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.205411) 3) M. Bescond, H. H. Carrillo-Nuñez, S. Berrada, N. Cavassilas and M. Lannoo, “Size and temperature dependence of the electron–phonon scattering by donors in nanowire transistors,” Solid State Electron. 122, 1 (2016). http://dx.doi.org/10.1016/j.sse.2016.04.010(https://www.sciencedirect.com/science/article/abs/pii/S0038110116300193?via%3Dihub) 4) H. Zhang, X. Dai, N. Guan, A. Messanvi, V. Neplokh, V. Piazza, M. Vallo, C. Bougerol, F. H. Julien, A. Babichev, N. Cavassilas, M. Bescond, F. Michelini, M. Foldyna, E. Gautier, C. Durand, J. Eymery, M. Tchernycheva, “Flexible Photodiodes Based on Nitride Core/Shell p–n Junction Nanowires,” ACS Applied Materials & Interfaces 8, 26198 (2016). http://dx.doi.org/10.1021/acsami.6b06414(https://pubs.acs.org/doi/10.1021/acsami.6b06414) 5) N. Cavassilas, F. Michelini, M. Bescond, “On the local approximation of the electron–photon interaction self-energy,” Journal of Computational Electronics 15, 1233 (2016). http://dx.doi.org/10.1007/s10825-016-0883-5(https://link.springer.com/article/10.1007%2Fs10825-016-0883-5) 6) M. Bescond and P. Dollfus, “Introduction to the special on inelastic scattering,” Journal of Computational Electronics 15, 1119 (2016). http://dx.doi.org/10.1007/s10825-016-0917-z(https://link.springer.com/article/10.1007%2Fs10825-016-0917-z) 7) K Beltako, N Cavassilas, F Michelini, “State hybridization shapes the photocurrent in triple quantum dot nanojunctions,” Appl. Phys. Lett. 109, 073501 (2016). http://dx.doi.org/10.1063/1.4961056(https://aip.scitation.org/doi/10.1063/1.4961056) 8) A. Portavoce, J. Perrin Toinin, K. Hoummada, L. Raymond, G. Tréglia, “Stress influence on substitutional impurity segregation on dislocation loops in IV–IV semiconductors,” Computational Materials Science 114, 23 (2016). http://dx.doi.org/10.1016/j.commatsci.2015.12.016(https://www.sciencedirect.com/science/article/abs/pii/S0927025615007922?via%3Dihub)

1) M. Moussavou, N. Cavassilas, E. Dib and M. Bescond, “Influence of uniaxial strain in Si and Ge p-type double-gate metal-oxide-semiconductor field effect transistors,” J. Appl. Phys. 118, 114503 (2015). http://dx.doi.org/10.1063/1.4930567(https://aip.scitation.org/doi/10.1063/1.4930567) 2) A. Crépieux and F. Michelini, “Mixed, charge and heat noises in thermoelectric nanosystems,” J. Phys.: Condens. Matter 27, 015302 (2015). http://dx.doi.org/10.1088/0953-8984/27/1/015302(https://iopscience.iop.org/article/10.1088/0953-8984/27/1/015302) 3) H. Ouali, C. Lambert-Mauriat, L. Raymond, A. Labidi, “Mechanism of O3 sensing on Cu2O(111) surface: First principle calculations,” Applied Surface Science, 351, 840 (2015). http://dx.doi.org/10.1016/j.apsusc.2015.06.017(https://www.sciencedirect.com/science/article/abs/pii/S0169433215013501?via%3Dihub) 4) L. Raymond, A. D. Verga, and A. Demion, “Anomalous quantum Hall effect induced by disorder in topological insulators,” Phys. Rev. B 92, 075101 (2015). http://dx.doi.org/10.1103/PhysRevB.92.075101(https://journals.aps.org/prb/abstract/10.1103/PhysRevB.92.075101) 5) S. Berrada, M. Bescond, N. Cavassilas, L. Raymond and M. Lannoo, “Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions”, Appl. Phys. Lett., 107, 153508 (2015). http://dx.doi.org/10.1063/1.4933392(https://aip.scitation.org/doi/10.1063/1.4933392) 6) N. Cavassilas, C. Gelly, F. Michelini, and M. Bescond, “Reflective barrier optimization in ultrathin single-junction GaAs solar cell,” IEEE Journal of Photovoltaics, 5, 1621 (2015). http://dx.doi.org/10.1109/JPHOTOV.2015.2478032.(https://ieeexplore.ieee.org/document/7283543/)

1) H. Carrillo-Nuñez, M. Bescond, N. Cavassilas, E. Dib, M. Lannoo, “Influence of electron-phonon interactions in single dopant nanowire transistors,” J. Appl. Phys. 116 164505 (2014). http://dx.doi.org/10.1063/1.4898863(https://aip.scitation.org/doi/10.1063/1.4898863) 2) N. Cavassilas, F. Michelini, M. Bescond, “Theoretical comparison of multiple quantum wells and thick-layer designs in InGaN/GaN solar cells,” Appl. Phys. Lett. 105, 063903 (2014). http://dx.doi.org/10.1063/1.4893024(https://aip.scitation.org/doi/10.1063/1.4893024) 3) N. Cavassilas, F. Michelini, and M. Bescond, “Modeling of nanoscale solar cells: the Green’s function formalism,” J. of Renewable and Sustainable Energy 6, 011203 (2014). http://dx.doi.org/10.1063/1.4828366(https://aip.scitation.org/doi/10.1063/1.4828366) 4) A. Berbezier and F. Michelini, “Quantum photovoltaics in wire-dot-wire junctions,” J. of Renewable and Sustainable Energy 6, 011205 (2014). http://dx.doi.org/10.1063/1.4828363(https://aip.scitation.org/doi/10.1063/1.4828363)

1) N. Cavassilas, M. Bescond, H. Mera, and M. Lannoo, “One-shot current conserving quantum transport modeling of phonon scattering in n-type double-gate field-effect-transistors,” Appl. Phys. Lett. 102, 013508 (2013). http://dx.doi.org/10.1063/1.4775365(https://aip.scitation.org/doi/10.1063/1.4775365) 2) E. Dib, M. Bescond, N. Cavassilas, F. Michelini, L. Raymond, and M. Lannoo, “Theoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors,” J. Appl. Phys. 114, 083705 (2013). http://dx.doi.org/10.1063/1.4819241(https://aip.scitation.org/doi/10.1063/1.4819241) 3) H. Mera, M. Lannoo, N. Cavassilas and M. Bescond, “Nanoscale device modelling using a conserving analytic continuation technique,” Phys. Rev. B 88, 075147 (2013). http://link.aps.org/doi/10.1103/PhysRevB.88.075147(http://link.aps.org/doi/10.1103/PhysRevB.88.075147) 4) A. Berbezier, J.L. Autran, F. Michelini, “Photovoltaic response in a resonant tunneling wire-dot-wire junction,” Appl. Phys. Lett. 103, 041113 (2013). http://dx.doi.org/10.1063/1.4816593(https://aip.scitation.org/doi/10.1063/1.4816593) 5) A. Berbezier, F. Michelini, “Modeling of quantum dot junction for third generation solar cell,” Thin Solid Films 543, 16-18 (2013). http://dx.doi.org/10.1016/j.tsf.2013.03.080(https://www.sciencedirect.com/science/article/abs/pii/S0040609013005270?via%3Dihub) 6) A. Berbezier and F. Michelini, “Green functions for photovoltaic response of quantum wire-dot-wire junctions,” Optical and Quantum Electronics 45, 693 (2013). http://dx.doi.org/10.1007/s11082-013-9686-0(https://link.springer.com/article/10.1007%2Fs11082-013-9686-0) 7) M. Bescond, C. Li, H. Mera, N. Cavassilas, M. Lannoo, “Modeling of phonon scattering in n-type nanowire transistors using one-shot analytic continuation technique,” J. Appl. Phys. 114, 153712 (2013). http://dx.doi.org/10.1063/1.4825226(https://aip.scitation.org/doi/10.1063/1.4825226)

1) H. Mera, M. Lannoo, C. Li, N. Cavassilas, M. Bescond, “Inelastic scattering in nanoscale devices one-shot current-conserving lowest order approximation,” Phys. Rev. B (rapid communications) 86, 161404 (2012). http://link.aps.org/doi/10.1103/PhysRevB.86.161404(https://journals.aps.org/prb/abstract/10.1103/PhysRevB.86.161404) 2) Y. A. Uspenskii, E. T. Kulatov, A. A.Titov, E. V. Tikhonov, F. Michelini, L. Raymond, “Electronic and magnetic properties of semiconducting nanoclusters and large organic molecules: Features interesting for spintronics,” J. Magn. Magn. Mater. 324, 3597 (2012). http://dx.doi.org/10.1016/j.jmmm.2012.02.099(https://linkinghub.elsevier.com/retrieve/pii/S0304885312001965) 3) A. Crépieux, F. Michelini, “Thermoelectricity and heat balance in a metal/dot/metal junction,” Int. J. Nanosci. 9, 355 (2012). http://www.inderscience.com/info/inarticle.php?artid=45341(https://www.inderscience.com/info/inarticle.php?artid=45341) 4) I. V. Kondakova, R. O. Kuzian, V. V. Laguta, A.-M. Dare, L. Raymond and R. Hayn, “Magnetoelectric Interactions in Mn- and Co-Doped Incipient Ferroelectrics from Density Functional Calculations,” Ferroelectrics 427, 70 (2012). https://doi.org/10.1080/00150193.2012.674410(https://www.tandfonline.com/doi/abs/10.1080/00150193.2012.674410) 5) T. L. van den Berg, L. Raymond and A. Verga, “Enhanced spin Hall effect in strong magnetic disorder,” Phys. Rev. B 86, 245420 (2012). http://link.aps.org/doi/10.1103/PhysRevB.86.245420(https://journals.aps.org/prb/abstract/10.1103/PhysRevB.86.245420)

1) N. Cavassilas, F. Michelini, M. Bescond, “Multiband quantum transport simulation of ultimate p-type double-gate transistor: Effect of hole-phonon scattering,” J. Appl. Phys. 109, 073706 (2011). http://link.aip.org/link/doi/10.1063/1.3556457(https://aip.scitation.org/doi/10.1063/1.3556457) 2) N. Pons, N. Cavassilas, L. Raymond, F. Michelini, M. Lannoo, M. Bescond, “Three-dimensional k.p real-space quantum transport simulations of p-type nanowire transistors: influence of ionized impurities,” Appl. Phys. Lett. 99, 082113 (2011). http://dx.doi.org/10.1063/1.3628316(https://aip.scitation.org/doi/10.1063/1.3628316) 3) A. Crépieux, F. Simkovic, B. Cambon, F. Michelini, “Enhanced thermopower under a time-dependent gate voltage,” Phys. Rev. B 83, 153417 (2011). http://link.aps.org/doi/10.1103/PhysRevB.83.153417(https://journals.aps.org/prb/abstract/10.1103/PhysRevB.83.153417) 4) F. Michelini, I. Ouerghi, “Interband optical properties of silicon [001] quantum wells using a two-conduction-band k . p model,” Appl. Phys. Lett. 99, 221912 (2011). http://dx.doi.org/10.1063/1.3663974(https://aip.scitation.org/doi/abs/10.1063/1.3663974) 5) J.-M. Laugier, L. Raymond, G. Albinet, and P. Knauth, “Numerical modelling of impedance spectra of ionic conductor-insulator core-shell composites,” Modelling Simul. Mater. Sci. Eng. 19, 065001 (2011). http://iopscience.iop.org/0965-0393/19/6/065001/(https://iopscience.iop.org/article/10.1088/0965-0393/19/6/065001) 6) T. L. van den Berg, L. Raymond and A. Verga, “Dynamical spin Hall conductivity in a magnetic disordered system,” Phys. Rev. B 84, 245210 (2011). http://link.aps.org/doi/10.1103/PhysRevB.84.245210(https://journals.aps.org/prb/abstract/10.1103/PhysRevB.84.245210)

1) C. Li, M. Bescond and M. Lannoo, “Influence of the interface-induced electron self-energy on the subthreshold characteristics of silicon gate-all-around nanowire transistors,” Appl. Phys. Lett. 97, 252109 (2010). http://link.aip.org/link/doi/10.1063/1.3526739(https://aip.scitation.org/doi/10.1063/1.3526739) 2) M. Bescond, M. Lannoo, L. Raymond and F. Michelini, “Single donor induced negative differential resistance in silicon n-type nanowire Metal-Oxide-Semiconductor transistors,” J. Appl. Phys. 107, 093703 (2010). http://dx.doi.org/10.1063/1.3399999(https://aip.scitation.org/doi/10.1063/1.3399999) 3) N. Cavassilas, N. Pons, F. Michelini and M. Bescond, “Multiband quantum transport simulations of ultimate p-type double-gate transistors: Influence of the channel orientation,” Appl. Phys. Lett. 96, 102102 (2010). http://dx.doi.org/10.1063/1.3352558(https://aip.scitation.org/doi/10.1063/1.3352558) 4) A. Titov, F. Michelini, L. Raymond, et al., “Gap narrowing in charged and doped silicon nanoclusters,” Phys. Rev. B 82, 235419 (2010). http://link.aps.org/doi/10.1103/PhysRevB.82.235419(https://journals.aps.org/prb/abstract/10.1103/PhysRevB.82.235419) 5) R. O. Kuzian, V. V. Laguta, A.-M. Daré, I. V. Kondakova, M. Marysko, L. Raymond, et al. “Mechanisms of magnetoelectricity in manganese-doped incipient ferroelectrics,” Europhys. Lett. 92 17007 (2010). http://dx.doi.org/10.1209/0295-5075/92/17007(https://iopscience.iop.org/article/10.1209/0295-5075/92/17007)

1) C. Li, M. Bescond and M. Lannoo, “A GW investigation of interface induced correlation effects on transport properties in realistic nanoscale structures,” Phys. Rev. B, 80, 195318 (2009). http://dx.doi.org/10.1103/PhysRevB.80.195318(https://journals.aps.org/prb/abstract/10.1103/PhysRevB.80.195318) 2) M. Bescond, C. Li, M. Lannoo, “Nanowire transistor modeling: influence of ionized impurity and correlation effects,” J. Comp. Electron. 8, 382 (2009), Invited paper. http://dx.doi.org/10.1007/s10825-009-0279-x(https://link.springer.com/article/10.1007%2Fs10825-009-0279-x) 3) N. Pons, N. Cavassilas, F. Michelini, L. Raymond and M. Bescond, “New shaped nanowire MOSFETs with enhanced current characteristics based on three-dimensional modeling,” J. Appl. Phys., 106, 053711 (2009). http://dx.doi.org/10.1063/1.3204550(https://aip.scitation.org/doi/10.1063/1.3204550) 4) C. Buran, M. G. Pala, M. Bescond, M. Dubois, and M. Mouis, “Three dimensional real space simulation of surface roughness in silicon nanowire FETs,” IEEE Trans. Electron Dev., 56, 2186 (2009). http://dx.doi.org/10.1109/TED.2009.2028382(http://dx.doi.org/10.1109/TED.2009.2028382)

1) A. Martinez, J. R. Barker, A. Svizhenko, A. Anantram, M. Bescond, and A. Asenov, “Ballistic quantum simulators for studying variability in nanotransistors,” J. Comput. Theor. Nanosci., 5, 2289-2310 (2008). Review paper, http://dx.doi.org/10.1166/jctn.2008.1201(https://www.ingentaconnect.com/content/asp/jctn/2008/00000005/00000012/art00001;jsessionid=pknhvqk6en29.x-ic-live-03) 2) K. Nehari, M. Lannoo, F. Michelini, N. Cavassilas, M. Bescond, and J. L. Autran, “Improved effective mass theory for silicon nanostructures,” Appl. Phys. Lett., 93, 092103 (2008). http://dx.doi.org/10.1063/1.2978196(https://aip.scitation.org/doi/10.1063/1.2978196) 3) A. Martinez, J.R. Barker, M. Bescond, A.R. Brown and A. Asenov, “Performance variability in wrap-round gate silicon nano-transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain,” J. Phys.-Conference Series, 109, 012026 (2008). 10.1088/1742-6596/109/1/012026(https://fr.art1lib.org/book/52295326/827ce1) 4) K. Rogdakis, S.-Y. Lee, M. Bescond, S.-K. Lee, E. Bano and K. Zekentes, “3C-Silicon Carbide nanowire FET: An experimental and theoretical Approach,” IEEE Trans. Electron Dev. 55, 1970 (2008). http://dx.doi.org/10.1109/TED.2008.926667(https://ieeexplore.ieee.org/document/4578882/) 5) C. Buran, M. G. Pala, M. Bescond, M. Mouis, “Full-three dimensional quantum simulation approach for surface-roughness-limited mobility in SNWT,” J. Comp. Electron. 7, 328 (2008). http://dx.doi.org/10.1007/s10825-008-0196-4(https://link.springer.com/article/10.1007%2Fs10825-008-0196-4) 6) A. Martinez, M. Bescond, A.R. Brouwn, J.R. Barker, A. Asenov, “A full 3D non-equilibrium green functions study of a stray charge in a nanowire MOS transistor,” J. Comp. Electron. 7, 359 (2008). http://dx.doi.org/10.1007/s10825-008-0240-4(https://link.springer.com/article/10.1007%2Fs10825-008-0240-4)

1) K. Rogdakis, M. Bescond, E. Bano and K. Zekentes, “Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes,” Nanotechnology 18, 475715 (2007). http://dx.doi.org/10.1088/0957-4484/18/47/475715(https://iopscience.iop.org/article/10.1088/0957-4484/18/47/475715) 2) A. Martinez, M. Bescond, J. R. Barker, A. Svizhenkov, A. Anantram, C. Millar, A. Asenov, “Self-consistent full 3D real-space NEGF simulator for studying of non-perturbative effects in nano-MOSFET,” IEEE Trans. Electron Dev. 54, 2213, (2007). http://dx.doi.org/10.1109/TED.2007.902867(https://ieeexplore.ieee.org/document/4294224/) 3) M. Bescond, N. Cavassilas, and M. Lannoo, “Effective-mass approach for n-type semiconductor Nanowire MOSFETs arbitrarily oriented,” Nanotechnology 18, 255201 (2007). http://dx.doi.org/10.1088/0957-4484/18/25/255201(https://iopscience.iop.org/article/10.1088/0957-4484/18/25/255201) 4) K. Nehari, N. Cavassilas, F. Michelini, M. Bescond, J.L. Autran, and M. Lannoo, “Full-band study of current across silicon nanowire transistors,” Appl. Phys. Lett., 90, 132112 (2007). http://dx.doi.org/10.1063/1.2716351(https://aip.scitation.org/doi/10.1063/1.2716351) 5) M. Bescond, N. Cavassilas, K. Nehari, and M. Lannoo, “Tight-Binding Calculations of Ge-nanowire Bandstructures,” J. Comp. Electron. 6, 341 (2007). http://dx.doi.org/10.1007/s10825-006-0137-z(https://link.springer.com/article/10.1007%2Fs10825-006-0137-z)