Publications

1) A. Philippe, F. Carosella, X. Zhu, C. Salhani K. Hirakawa, M. Bescond, R. Ferreira, and G. Bastard, “Rate equations description of the asymmetric double barrier electronic cooler,” J. Appl. Phys., 134, 124305 (2023). https://doi.org/10.1063/5.0155720 2) P. Dalla Valle, M. Bescond, F. Michelini, and N. Cavassilas, "Laser cooling in semiconductor heterojunctions by extraction of photogenerated carriers," Phys. Rev. Appl. 20, 014066 (2023). https://doi.org/10.1103/PhysRevApplied.20.014066 3) C. Belabbas, A. Crépieux , N. Cavassilas, F. Michelini, X. Zhu, C. Salhani, G. Etesse, K. Hirakawa and M. Bescond, "Temperature-Induced Revolving Effect of Electronic Flow in Asymmetric Double-Barrier Semiconductor Heterostructures," Phys. Rev. Appl. 20, 014056 (2023). https://doi.org/10.1103/PhysRevApplied.20.014056 4) Z. Zhang, Y. Guo, M. Bescond, M. Nomura, S. Volz, J. Chen, “Assessing phonon coherence using spectroscopy,” Phys. Rev. B 107, 155426 (2023). https://doi.org/10.1103/PhysRevB.107.155426

1) Z. Zhang, Y. Guo, M. Bescond, J. Chen, M. Nomura and S. Volz, “Heat Conduction Theory Including Phonon Coherence,” Phys. Rev. Lett. 128, 015901 (2022). https://doi.org/10.1103/PhysRevLett.128.015901 2) M. Bescond, G. Dangoisse, X. Zhu, C. Salhani and K. Hirakawa, "Comprehensive analysis of electron evaporative cooling in double-barrier semiconductor heterostructures,” Phys. Rev. Appl. 17, 014001(2022). https://doi.org/10.1103/PhysRevApplied.17.014001 3) N. Cavassilas, I. Makhfudz, A.-M. Daré, M. Lannoo, G. Dangoisse, M. Bescond, F. Michelini, “Theoretical Demonstration of Hot-Carrier Operation in an Ultrathin Solar Cell,” Phys. Rev. Appl. 17 (6), 064001 (2022). https://doi.org/10.1103/PhysRevApplied.17.064001 4) Z. Zhang, Y. Guo, M. Bescond, J. Chen, M. Nomura and S. Volz, "How coherence is governing diffuson heat transfer in amorphous solids," Npj Comput. Mater. 8, 96 (2022). https://doi.org/10.1038/s41524-022-00776-w 5) I. Makhfudz, N. Cavassilas, M. Giteau, H. Esmaielpour, D. Suchet, A.-M. Daré, F. Michelini, "Enhancement of hot carrier effect and signatures of confinement in terms of thermalization power in quantum well solar cell," J. Phys. D: Appl. Phys. 55 (47), 475102 (2022). https://doi.org/10.1088/1361-6463/ac94dd

1) X. Zhu, M. Bescond, T. Onoue, G. Bastard, F. Carosella, R. Ferreira, N. Nagai, and K. Hirakawa, “Electron transport in double-barrier semiconductor heterostructures for thermionic cooling,” Phys. Rev. Appl., 16, 064017 (2021) https://doi.org/10.1103/PhysRevApplied.16.064017 2) Y. Guo, M. Bescond, Z. Zhang, S. Xiong, K. Hirakawa, M. Nomura, S. Volz, “Thermal conductivity minimum of graded superlattices due to phonon localization,” APL Materials 9 (9), 091104 (2021). https://doi.org/10.1063/5.0054921 3) Y. Guo, Z. Zhang, M. Bescond, S. Xiong, M. Wang, M. Nomura, S. Volz, “Size effect on phonon hydrodynamics in graphite microstructures and nanostructures,” Phys. Rev. B 104 (7), 075450 (2021). https://doi.org/10.1103/PhysRevB.104.075450 4) Y. Guo, Z. Zhang, M. Bescond, S. Xiong, M. Nomura, S. Volz, “Anharmonic phonon-phonon scattering at the interface between two solids by nonequilibrium Green's function formalism,” Phys. Rev. B 103 (17), 174306 (2021). https://doi.org/10.1103/PhysRevB.103.174306 5) Z. Zhang, Y. Guo, M. Bescond, J. Chen, M. Nomura, S. Volz, “Coherent thermal transport in nano-phononic crystals: An overview,” APL Materials 9 (8), 081102 (2021). https://doi.org/10.1063/5.0059024 6) Z. Zhang, Y. Guo, M. Bescond, J. Chen, M. Nomura, S. Volz, “Thermal self-synchronization of nano-objects,” J. Appl. Phys. 130 (8), 084301 (2021). https://doi.org/10.1063/5.0058252 7) Z. Zhang, Y. Guo, M. Bescond, J. Chen, M. Nomura, S. Volz, “Generalized decay law for particle like and wavelike thermal phonons,” Phys. Rev. B 103 (18), 184307 (2021). https://doi.org/10.1103/PhysRevB.103.184307 8) K. Li, Y. Cheng, H. Wang, Y. Guo, Z. Zhang, M. Bescond, M. Nomura, S. Volz, X. Zhang, S. Xiong, “Phonon resonant effect in silicon membranes with different crystallographic orientations,” Int. J. Heat Mass Transf. (in press) 2021. https://doi.org/10.1016/j.ijheatmasstransfer.2021.122144 9) H. Wang, Y. Cheng, Z. Fan, Y. Guo, Z. Zhang, M. Bescond, M. Nomura, T. Ala-Nissila, S. Volz, S. Xiong, “Anomalous thermal conductivity enhancement in low dimensional resonant nanostructures due to imperfections,” Nanoscale, 13, 10010 (2021). https://doi.org/10.1039/D1NR01679B

1) M. Bescond, K. Hirakawa, “High performance thermionic cooling devices based on tilted-barrier semiconductor heterostructures,” Phys. Rev. Appl., 14, 064022 (2020). [Editor’s Suggestion] https://doi.org/10.1103/PhysRevApplied.14.064022 2) Y. Guo, M. Bescond, Z. Zhang, M. Luisier, M. Nomura, and S. Volz, “Quantum mechanical modeling of anharmonic phonon-phonon scattering in nanostructures,” Phys. Rev. B, 102, 195412 (2020). https://doi.org/10.1103/PhysRevB.102.195412 3) N. Cavassilas, D. Suchet, A. Delamarre, J.-F. Guillemoles, F. Michelini, M. Bescond, M. Lannoo, “Optimized operation of quantum-dot intermediate-band solar cells deduced from electronic-transport modeling,” Phys. Rev. Applied 13 (4), 044035, 2020. https://doi.org/10.1103/PhysRevApplied.13.044035 4) Y. Lee, D. Logoteta, N. Cavassilas, M. Lannoo, M. Luisier, M. Bescond, “Quantum Treatment of Inelastic Interactions for the Modeling of Nanowire Field-Effect Transistors,” Materials 13 (1), 60, 2020. https://www.mdpi.com/1996-1944/13/1/60

1) K. Beltako, N. Cavassilas, M. Lannoo, F.V. Michelini, “Insights into the Charge Separation Dynamics in Photoexcited Molecular Junctions,” The Journal of Physical Chemistry C, 123 (51), 30885, 2019. https://pubs.acs.org/doi/abs/10.1021/acs.jpcc.9b10911 2) B. Galvani, D. Suchet, A. Delamarre, M. Bescond, F. Michelini, M. Lannoo, J.-F. Guillemoles, N. Cavassilas, “Impact of electron-phonon scattering on optical properties of CH3NH3PbI3 hybrid perovskite material,” ACS Omega, 4 (25), 21487, 2019. https://pubs.acs.org/doi/abs/10.1021/acsomega.9b03178 3) K. Louarn, Y. Claveau, C. Fontaine, A. Arnoult, L. Marigo-Lombart, I. Massiot, F. Piquemal, A. Bounouh, N. Cavassilas, G. Almuneau, “Thickness limitation of band-to-band tunneling process in GaAsSb/InGaAs type-II tunnel junctions designed for multijunction solar cells,” ACS Applied Energy Materials, 2 (2), 1149, 2019. https://pubs.acs.org/doi/10.1021/acsaem.8b01700 4) A. Yangui, M. Bescond, T. Yan,N. Nagai, and K. Hirakawa, “Evaporative electron cooling in asymmetric double barrier semiconductor heterostructures,” Nature Commun. 10, 4504 (2019). https://doi.org/10.1038/s41467-019-12488-9 5) M. Brahma, A. Kabiraj, M. Bescond, S. Mahapatra, “Phonon limited anisotropic quantum transport in phosphorene field effect transistors,” J. Appl. Phys. 126, 114502 (2019). https://doi.org/10.1063/1.5109057

1) N. Cavassilas, D. Logoteta, Y. Lee, F. Michelini, M. Lannoo, M. Bescond, M. Luisier, “A Dual-Gated WTe2/MoSe2 van der Waals Tandem Solar Cell,” The Journal of Physical Chemistry C, 122 (50), 28545, 2018. https://pubs.acs.org/doi/abs/10.1021/acs.jpcc.8b09905 2) N. Cavassilas, D. Suchet, A. Delamarre, F. Michelini, M. Bescond, Y. Okada, M. Sugiyama, J.-F. Guillemoles, “Beneficial impact of a thin tunnel barrier in quantum well intermediate-band solar cell,” EPJ Photovoltaics 9 (11), 2018. https://doi.org/10.1051/epjpv/2018009 3) S. Almosni, A. Delamarre, Z. Jehl, D. Suchet, L. Cojocaru, M. Giteau, B. Behaghel, A. Julian, C. Ibrahim, L. Tatry, H. Wang, T. Kubo, S. Uchida, H. Segawa, N. Miyashita, R. Tamaki, Ya. Shoji, K. Yoshida, N. Ahsan, K. Watanabe, T. Inoue, M. Sugiyama, Y. Nakano, T. Hamamura, T. Toupance, C. Olivier, S. Chambon, L. Vignau, C. Geffroy, E. Cloutet, G. Hadziioannou, N. Cavassilas, P. Rale, A. Cattoni, S. Collin, F. Gibelli, M. Paire, L. Lombez, D. Aureau, M. Bouttemy, Ar. Etcheberry, Y. Okada, J.-F. Guillemoles, “Material challenges for solar cells in the twenty-first century: directions in emerging technologies,” Science and Technology of Advanced Materials 19 (1), 2018. https://doi.org/10.1080/14686996.2018.1433439 4) M. Moussavou, M. Lannoo, N. Cavassilas, D. Logoteta, M. Bescond, “Physically based Diagonal Treatment of the Self-Energy of Polar Optical Phonons: Performance Assessment of III-V Double-Gate Transistors,” Physical Review Applied 10 (6), 064023, 2018. https://doi.org/10.1103/PhysRevApplied.10.064023 5) Y. Lee, M. Bescond, D. Logoteta, N. Cavassilas, M. Lannoo, M. Luisier, “Anharmonic phonon-phonon scattering modeling of three-dimensional atomistic transport: An efficient quantum treatment,” Physical Review B 97 (20), 205447, 2018. https://doi.org/10.1103/PhysRevB.97.205447 6) K. Beltako, F. Michelini, N. Cavassilas, L. Raymond, “Dynamical photo-induced electronic properties of molecular junctions,” The Journal of Chemical Physics 148 (10), 104301 ,2018. https://doi.org/10.1063/1.5004778 7) B. Galvani, A. Delamarre, D. Suchet, M. Bescond, F. Michelini, M. Lannoo, M. Sugyiama, J. Even, J.-F. Guillemoles, N. Cavassilas, “Reduction of Voc induced by the electron-phonon scattering in GaAs and CH3NH3PbI3,” 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC), 2018. 10.1109/PVSC.2018.8547650 8) K. Louarn, Y. Claveau, L. Marigo-Lombart, C. Fontaine, A. Arnoult, F. Piquemal, A. Bounouh, N. Cavassilas, G. Almuneau, “Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions,” Journal of Physics D: Applied Physics, 51 (14), 2018. https://iopscience.iop.org/article/10.1088/1361-6463/aab1de 9) A. Delamarre, D. Suchet, N. Cavassilas, Y. Okada, M. Sugiyama, J.-F. Guillemoles, “Non-ideal nanostructured intermediate band solar cells with an electronic ratchet,” Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII (SPIE) 2018. https://doi.org/10.1117/12.2287716 10) D. Suchet, A. Delamarre, N. Cavassilas, Z. Jehl, Y. Okada, M. Sugiyama, J.-F. Guillemoles, “Voltage preservation in Intermediate Band Solar Cells,” Progress in Photovoltaics: Research and Applications 26 (10), 800, 2018. https://onlinelibrary.wiley.com/toc/1099159x/26/10 11) A. Delamarre, D. Suchet, N. Cavassilas, Y. Okada, M. Sugiyama, J.-F. Guillemoles, “An electronic ratchet is required in nanostructured intermediate band solar cells,” IEEE Journal of Photovoltaics, 8 (6), 1553, 2018. 10.1109/JPHOTOV.2018.2866186 12) M. Bescond, D. Logoteta, F. Michelini, N. Cavassilas, T. Yan, A. Yangui, M. Lannoo, K. Hirakawa, “Thermionic cooling devices based on resonant-tunneling AlGaAs/GaAs heterostructure,” Journal of Physics: Condensed Matter, 30 (6), 2018. https://doi.org/10.1088/1361-648X/aaa4cf 13) D. Logoteta, N. Cavassilas, A. Cresti, M. G Pala, M. Bescond, “Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs,” IEEE Transactions on Electron Devices 65 (2), 424, 2018. 10.1109/TED.2017.2785123 14) M. Brahma, M. Bescond, D. Logoteta, R. K. Ghosh and S. Mahapatra, “Germanane MOSFET for sub-deca nanometer high performance technology nodes,” IEEE Trans. Electron Devices 65, 1198 (2018). https://doi.org/10.1109/TED.2017.2788463

1) D. Duche, U. Planchoke, F.-X. Dang, J. Le Rouzo, M. Bescond, J.-J. Simon, T. S. Balaban, and L. Escoubas, “Model of self assembled monolayer based molecular diodes made of ferrocenyl-alkanethiols,” J. Appl. Phys. 121, 115503 (2017). http://dx.doi.org/10.1063/1.4978764 2) F. Michelini, A. Crépieux and K. Beltako “Entropy production in photovoltaic-thermoelectric nanodevices from the non-equilibrium Green’s function formalism,” J. Phys. Condens. Matter. 29, 175301 (2017). https://doi.org/10.1088/1361-648X/aa62e4 3) N. Cavassilas, Y. Claveau, M Bescond, F. Michelini, “Quantum electronic transport in polarization-engineered GaN/InGaN/GaN tunnel junctions,” Appl. Phys. Lett. 110, 161106 (2017). https://doi.org/10.1063/1.4981135 4) Y. Lee, M. Bescond, N. Cavassilas, D. Logoteta, L. Raymond, M. Lannoo, M. Luisier, “Quantum treatment of phonon scattering for modeling of three-dimensional atomistic transport,” Phys. Rev. B (R) 95, 201412 (2017). https://doi.org/10.1103/PhysRevB.95.201412 5) H. Zhang, N. Guan, V. Piazza, A. Kapoor, C. Bougerol, F. H. Julien, A. V. Babichev, N. Cavassilas, M. Bescond, F. Michelini, M. Foldyna, E. Gautier, C. Durand, J. Eymery, M. Tchernycheva, “Comprehensive analyses of core–shell InGaN/GaN single nanowire photodiodes,” Journal of Physics D: Applied Physics, 50, 484001 (2017). https://doi.org/10.1088/1361-6463/aa935d

1) E. Dib, H. Carrillo-Nuñez, N. Cavassilas and M. Bescond, “Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions,” J. Appl. Phys. 119, 044509 (2016). http://dx.doi.org/10.1063/1.4940959 2) Y. Lee, M. Lannoo, N. Cavassilas, M. Luisier, and M. Bescond, “Efficient quantum modeling of inelastic interactions in nanodevices,” Phys. Rev. B 93, 205411 (2016). http://dx.doi.org/10.1103/PhysRevB.93.205411 3) M. Bescond, H. H. Carrillo-Nuñez, S. Berrada, N. Cavassilas and M. Lannoo, “Size and temperature dependence of the electron–phonon scattering by donors in nanowire transistors,” Solid State Electron. 122, 1 (2016). http://dx.doi.org/10.1016/j.sse.2016.04.010 4) H. Zhang, X. Dai, N. Guan, A. Messanvi, V. Neplokh, V. Piazza, M. Vallo, C. Bougerol, F. H. Julien, A. Babichev, N. Cavassilas, M. Bescond, F. Michelini, M. Foldyna, E. Gautier, C. Durand, J. Eymery, M. Tchernycheva, “Flexible Photodiodes Based on Nitride Core/Shell p–n Junction Nanowires,” ACS Applied Materials & Interfaces 8, 26198 (2016). http://dx.doi.org/10.1021/acsami.6b06414 5) N. Cavassilas, F. Michelini, M. Bescond, “On the local approximation of the electron–photon interaction self-energy,” Journal of Computational Electronics 15, 1233 (2016). http://dx.doi.org/10.1007/s10825-016-0883-5 6) M. Bescond and P. Dollfus, “Introduction to the special on inelastic scattering,” Journal of Computational Electronics 15, 1119 (2016). http://dx.doi.org/10.1007/s10825-016-0917-z 7) K Beltako, N Cavassilas, F Michelini, “State hybridization shapes the photocurrent in triple quantum dot nanojunctions,” Appl. Phys. Lett. 109, 073501 (2016). http://dx.doi.org/10.1063/1.4961056 8) A. Portavoce, J. Perrin Toinin, K. Hoummada, L. Raymond, G. Tréglia, “Stress influence on substitutional impurity segregation on dislocation loops in IV–IV semiconductors,” Computational Materials Science 114, 23 (2016). http://dx.doi.org/10.1016/j.commatsci.2015.12.016

1) M. Moussavou, N. Cavassilas, E. Dib and M. Bescond, “Influence of uniaxial strain in Si and Ge p-type double-gate metal-oxide-semiconductor field effect transistors,” J. Appl. Phys. 118, 114503 (2015). http://dx.doi.org/10.1063/1.4930567 2) A. Crépieux and F. Michelini, “Mixed, charge and heat noises in thermoelectric nanosystems,” J. Phys.: Condens. Matter 27, 015302 (2015). http://dx.doi.org/10.1088/0953-8984/27/1/015302 3) H. Ouali, C. Lambert-Mauriat, L. Raymond, A. Labidi, “Mechanism of O3 sensing on Cu2O(111) surface: First principle calculations,” Applied Surface Science, 351, 840 (2015). http://dx.doi.org/10.1016/j.apsusc.2015.06.017 4) L. Raymond, A. D. Verga, and A. Demion, “Anomalous quantum Hall effect induced by disorder in topological insulators,” Phys. Rev. B 92, 075101 (2015). http://dx.doi.org/10.1103/PhysRevB.92.075101 5) S. Berrada, M. Bescond, N. Cavassilas, L. Raymond and M. Lannoo, “Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions”, Appl. Phys. Lett., 107, 153508 (2015). http://dx.doi.org/10.1063/1.4933392 6) N. Cavassilas, C. Gelly, F. Michelini, and M. Bescond, “Reflective barrier optimization in ultrathin single-junction GaAs solar cell,” IEEE Journal of Photovoltaics, 5, 1621 (2015). http://dx.doi.org/10.1109/JPHOTOV.2015.2478032.

1) H. Carrillo-Nuñez, M. Bescond, N. Cavassilas, E. Dib, M. Lannoo, “Influence of electron-phonon interactions in single dopant nanowire transistors,” J. Appl. Phys. 116 164505 (2014). http://dx.doi.org/10.1063/1.4898863 2) N. Cavassilas, F. Michelini, M. Bescond, “Theoretical comparison of multiple quantum wells and thick-layer designs in InGaN/GaN solar cells,” Appl. Phys. Lett. 105, 063903 (2014). http://dx.doi.org/10.1063/1.4893024 3) N. Cavassilas, F. Michelini, and M. Bescond, “Modeling of nanoscale solar cells: the Green’s function formalism,” J. of Renewable and Sustainable Energy 6, 011203 (2014). http://dx.doi.org/10.1063/1.4828366 4) A. Berbezier and F. Michelini, “Quantum photovoltaics in wire-dot-wire junctions,” J. of Renewable and Sustainable Energy 6, 011205 (2014). http://dx.doi.org/10.1063/1.4828363

1) N. Cavassilas, M. Bescond, H. Mera, and M. Lannoo, “One-shot current conserving quantum transport modeling of phonon scattering in n-type double-gate field-effect-transistors,” Appl. Phys. Lett. 102, 013508 (2013). http://dx.doi.org/10.1063/1.4775365 2) E. Dib, M. Bescond, N. Cavassilas, F. Michelini, L. Raymond, and M. Lannoo, “Theoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors,” J. Appl. Phys. 114, 083705 (2013). http://dx.doi.org/10.1063/1.4819241 3) H. Mera, M. Lannoo, N. Cavassilas and M. Bescond, “Nanoscale device modelling using a conserving analytic continuation technique,” Phys. Rev. B 88, 075147 (2013). http://link.aps.org/doi/10.1103/PhysRevB.88.075147 4) A. Berbezier, J.L. Autran, F. Michelini, “Photovoltaic response in a resonant tunneling wire-dot-wire junction,” Appl. Phys. Lett. 103, 041113 (2013). http://dx.doi.org/10.1063/1.4816593 5) A. Berbezier, F. Michelini, “Modeling of quantum dot junction for third generation solar cell,” Thin Solid Films 543, 16-18 (2013). http://dx.doi.org/10.1016/j.tsf.2013.03.080 6) A. Berbezier and F. Michelini, “Green functions for photovoltaic response of quantum wire-dot-wire junctions,” Optical and Quantum Electronics 45, 693 (2013). http://dx.doi.org/10.1007/s11082-013-9686-0 7) M. Bescond, C. Li, H. Mera, N. Cavassilas, M. Lannoo, “Modeling of phonon scattering in n-type nanowire transistors using one-shot analytic continuation technique,” J. Appl. Phys. 114, 153712 (2013). http://dx.doi.org/10.1063/1.4825226

1) H. Mera, M. Lannoo, C. Li, N. Cavassilas, M. Bescond, “Inelastic scattering in nanoscale devices one-shot current-conserving lowest order approximation,” Phys. Rev. B (rapid communications) 86, 161404 (2012). http://link.aps.org/doi/10.1103/PhysRevB.86.161404 2) Y. A. Uspenskii, E. T. Kulatov, A. A.Titov, E. V. Tikhonov, F. Michelini, L. Raymond, “Electronic and magnetic properties of semiconducting nanoclusters and large organic molecules: Features interesting for spintronics,” J. Magn. Magn. Mater. 324, 3597 (2012). http://dx.doi.org/10.1016/j.jmmm.2012.02.099 3) A. Crépieux, F. Michelini, “Thermoelectricity and heat balance in a metal/dot/metal junction,” Int. J. Nanosci. 9, 355 (2012). http://www.inderscience.com/info/inarticle.php?artid=45341 4) I. V. Kondakova, R. O. Kuzian, V. V. Laguta, A.-M. Dare, L. Raymond and R. Hayn, “Magnetoelectric Interactions in Mn- and Co-Doped Incipient Ferroelectrics from Density Functional Calculations,” Ferroelectrics 427, 70 (2012). https://doi.org/10.1080/00150193.2012.674410 5) T. L. van den Berg, L. Raymond and A. Verga, “Enhanced spin Hall effect in strong magnetic disorder,” Phys. Rev. B 86, 245420 (2012). http://link.aps.org/doi/10.1103/PhysRevB.86.245420

1) N. Cavassilas, F. Michelini, M. Bescond, “Multiband quantum transport simulation of ultimate p-type double-gate transistor: Effect of hole-phonon scattering,” J. Appl. Phys. 109, 073706 (2011). http://link.aip.org/link/doi/10.1063/1.3556457 2) N. Pons, N. Cavassilas, L. Raymond, F. Michelini, M. Lannoo, M. Bescond, “Three-dimensional k.p real-space quantum transport simulations of p-type nanowire transistors: influence of ionized impurities,” Appl. Phys. Lett. 99, 082113 (2011). http://dx.doi.org/10.1063/1.3628316 3) A. Crépieux, F. Simkovic, B. Cambon, F. Michelini, “Enhanced thermopower under a time-dependent gate voltage,” Phys. Rev. B 83, 153417 (2011). http://link.aps.org/doi/10.1103/PhysRevB.83.153417 4) F. Michelini, I. Ouerghi, “Interband optical properties of silicon [001] quantum wells using a two-conduction-band k . p model,” Appl. Phys. Lett. 99, 221912 (2011). http://dx.doi.org/10.1063/1.3663974 5) J.-M. Laugier, L. Raymond, G. Albinet, and P. Knauth, “Numerical modelling of impedance spectra of ionic conductor-insulator core-shell composites,” Modelling Simul. Mater. Sci. Eng. 19, 065001 (2011). http://iopscience.iop.org/0965-0393/19/6/065001/ 6) T. L. van den Berg, L. Raymond and A. Verga, “Dynamical spin Hall conductivity in a magnetic disordered system,” Phys. Rev. B 84, 245210 (2011). http://link.aps.org/doi/10.1103/PhysRevB.84.245210

1) C. Li, M. Bescond and M. Lannoo, “Influence of the interface-induced electron self-energy on the subthreshold characteristics of silicon gate-all-around nanowire transistors,” Appl. Phys. Lett. 97, 252109 (2010). http://link.aip.org/link/doi/10.1063/1.3526739 2) M. Bescond, M. Lannoo, L. Raymond and F. Michelini, “Single donor induced negative differential resistance in silicon n-type nanowire Metal-Oxide-Semiconductor transistors,” J. Appl. Phys. 107, 093703 (2010). http://dx.doi.org/10.1063/1.3399999 3) N. Cavassilas, N. Pons, F. Michelini and M. Bescond, “Multiband quantum transport simulations of ultimate p-type double-gate transistors: Influence of the channel orientation,” Appl. Phys. Lett. 96, 102102 (2010). http://dx.doi.org/10.1063/1.3352558 4) A. Titov, F. Michelini, L. Raymond, et al., “Gap narrowing in charged and doped silicon nanoclusters,” Phys. Rev. B 82, 235419 (2010). http://link.aps.org/doi/10.1103/PhysRevB.82.235419 5) R. O. Kuzian, V. V. Laguta, A.-M. Daré, I. V. Kondakova, M. Marysko, L. Raymond, et al. “Mechanisms of magnetoelectricity in manganese-doped incipient ferroelectrics,” Europhys. Lett. 92 17007 (2010). http://dx.doi.org/10.1209/0295-5075/92/17007

1) C. Li, M. Bescond and M. Lannoo, “A GW investigation of interface induced correlation effects on transport properties in realistic nanoscale structures,” Phys. Rev. B, 80, 195318 (2009). http://dx.doi.org/10.1103/PhysRevB.80.195318 2) M. Bescond, C. Li, M. Lannoo, “Nanowire transistor modeling: influence of ionized impurity and correlation effects,” J. Comp. Electron. 8, 382 (2009), Invited paper. http://dx.doi.org/10.1007/s10825-009-0279-x 3) N. Pons, N. Cavassilas, F. Michelini, L. Raymond and M. Bescond, “New shaped nanowire MOSFETs with enhanced current characteristics based on three-dimensional modeling,” J. Appl. Phys., 106, 053711 (2009). http://dx.doi.org/10.1063/1.3204550 4) C. Buran, M. G. Pala, M. Bescond, M. Dubois, and M. Mouis, “Three dimensional real space simulation of surface roughness in silicon nanowire FETs,” IEEE Trans. Electron Dev., 56, 2186 (2009). http://dx.doi.org/10.1109/TED.2009.2028382

1) A. Martinez, J. R. Barker, A. Svizhenko, A. Anantram, M. Bescond, and A. Asenov, “Ballistic quantum simulators for studying variability in nanotransistors,” J. Comput. Theor. Nanosci., 5, 2289-2310 (2008). Review paper, http://dx.doi.org/10.1166/jctn.2008.1201 2) K. Nehari, M. Lannoo, F. Michelini, N. Cavassilas, M. Bescond, and J. L. Autran, “Improved effective mass theory for silicon nanostructures,” Appl. Phys. Lett., 93, 092103 (2008). http://dx.doi.org/10.1063/1.2978196 3) A. Martinez, J.R. Barker, M. Bescond, A.R. Brown and A. Asenov, “Performance variability in wrap-round gate silicon nano-transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain,” J. Phys.-Conference Series, 109, 012026 (2008). 10.1088/1742-6596/109/1/012026 4) K. Rogdakis, S.-Y. Lee, M. Bescond, S.-K. Lee, E. Bano and K. Zekentes, “3C-Silicon Carbide nanowire FET: An experimental and theoretical Approach,” IEEE Trans. Electron Dev. 55, 1970 (2008). http://dx.doi.org/10.1109/TED.2008.926667 5) C. Buran, M. G. Pala, M. Bescond, M. Mouis, “Full-three dimensional quantum simulation approach for surface-roughness-limited mobility in SNWT,” J. Comp. Electron. 7, 328 (2008). http://dx.doi.org/10.1007/s10825-008-0196-4 6) A. Martinez, M. Bescond, A.R. Brouwn, J.R. Barker, A. Asenov, “A full 3D non-equilibrium green functions study of a stray charge in a nanowire MOS transistor,” J. Comp. Electron. 7, 359 (2008). http://dx.doi.org/10.1007/s10825-008-0240-4

1) K. Rogdakis, M. Bescond, E. Bano and K. Zekentes, “Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes,” Nanotechnology 18, 475715 (2007). http://dx.doi.org/10.1088/0957-4484/18/47/475715 2) A. Martinez, M. Bescond, J. R. Barker, A. Svizhenkov, A. Anantram, C. Millar, A. Asenov, “Self-consistent full 3D real-space NEGF simulator for studying of non-perturbative effects in nano-MOSFET,” IEEE Trans. Electron Dev. 54, 2213, (2007). http://dx.doi.org/10.1109/TED.2007.902867 3) M. Bescond, N. Cavassilas, and M. Lannoo, “Effective-mass approach for n-type semiconductor Nanowire MOSFETs arbitrarily oriented,” Nanotechnology 18, 255201 (2007). http://dx.doi.org/10.1088/0957-4484/18/25/255201 4) K. Nehari, N. Cavassilas, F. Michelini, M. Bescond, J.L. Autran, and M. Lannoo, “Full-band study of current across silicon nanowire transistors,” Appl. Phys. Lett., 90, 132112 (2007). http://dx.doi.org/10.1063/1.2716351 5) M. Bescond, N. Cavassilas, K. Nehari, and M. Lannoo, “Tight-Binding Calculations of Ge-nanowire Bandstructures,” J. Comp. Electron. 6, 341 (2007). http://dx.doi.org/10.1007/s10825-006-0137-z